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- W2783254529 abstract "Abstract A variety of theoretical and experimental works have reported several potential applications of MoS 2 monolayer based heterostructures (HSs) such as light emitting diodes, photodetectors and field effect transistors etc. In the present work, we have theoretically performed as a model case study, MoS 2 monolayer deposited over insulating SrTiO 3 (001) to study the band alignment at TiO 2 termination. The interfacial characteristics are found to be highly dependent on the interface termination. With an insulating oxide material, a significant band gap (0.85eV) is found in MoS 2 /TiO 2 interface heterostructure (HS). A unique electronic band profile with an indirect band gap (0.67eV) is observed in MoS 2 monolayer when confined in a cubic environment of SrTiO 3 (STO). Adsorption analysis showed the chemisorption of MoS 2 on the surface of STO substrate with TiO 2 termination which is justified by the charge density calculations that shows the existence of covalent bonding at the interface. The fabrication of HS of such materials paves the path for developing the unprecedented 2D materials with exciting properties such as semiconducting devices, thermoelectric and optoelectronic applications." @default.
- W2783254529 created "2018-01-26" @default.
- W2783254529 creator A5038511829 @default.
- W2783254529 creator A5056108743 @default.
- W2783254529 date "2018-01-15" @default.
- W2783254529 modified "2023-10-13" @default.
- W2783254529 title "Interfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study" @default.
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- W2783254529 doi "https://doi.org/10.1038/s41598-017-18984-6" @default.
- W2783254529 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/5768749" @default.
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- W2783254529 hasPublicationYear "2018" @default.
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