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• W2783404993 abstract "We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, grown by molecular beam epitaxy (MBE). The influence of the different dopants on strain and free-carrier concentration was investigated. Furthermore, we report on several local vibrational modes (LVM) around 2200 cm −1 in Raman spectra of highly Mg-doped GaN. A possible explanation of these high-energy modes in terms of hydrogen-related vibrations is given. We also found a variety of new structures in the range of the GaN host lattice phonons. Secondary ion mass spectroscopy (SIMS) was applied to determine the concentration of magnesium and unintentionally incorporated hydrogen." @default.
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• W2783404993 date "1999-01-01" @default.
• W2783404993 modified "2023-10-02" @default.
• W2783404993 title "Influence of Doping on the Lattice Dynamics of Gallium Nitride" @default.
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• W2783404993 doi "https://doi.org/10.1557/s1092578300002672" @default.
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