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• W2783452330 endingPage "02BD03" @default.
• W2783452330 startingPage "02BD03" @default.
• W2783452330 abstract "We present our newly developed sequential plasma activation methods for hydrophilic direct bonding of silica glasses and thermally grown SiO2 films. N2 plasma was employed to introduce a metastable oxynitride layer on wafer surfaces for the improvement of bond energy. By using either O2-plasma/N2-plasma/N-radical or N2-plasma/N-radical sequential activation, the quartz–quartz bond energy was increased from 2.7 J/m2 to close to the quartz bulk fracture energy that was estimated to be around 9.0 J/m2 after post-bonding annealing at 200 °C. The silicon bulklike bond energy between thermal SiO2 films was also obtained. We suggest that the improvement is attributable to surface modification such as N-related defect formation and asperity softening by the N2 plasma surface treatment." @default.
• W2783452330 created "2018-01-26" @default.
• W2783452330 creator A5009305405 @default.
• W2783452330 creator A5030803196 @default.
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• W2783452330 date "2018-01-10" @default.
• W2783452330 modified "2023-10-01" @default.
• W2783452330 title "Sequential plasma activation methods for hydrophilic direct bonding at sub-200 °C" @default.
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• W2783452330 doi "https://doi.org/10.7567/jjap.57.02bd03" @default.
• W2783452330 hasPublicationYear "2018" @default.
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