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- W2783457300 abstract "Abstract The chemical etching of intrinsic and n-type poly-Si with phosphorus concentration 5 × 10 18 cm − 3 in Cl2 environment is investigated. It is found that phosphorus doping increases formation and desorption of SiCl2 molecules. The activation energy of Si + Cl 2 → SiCl 2 reaction for intrinsic poly-Si is equal to 1.73 ± 0.24 eV , and it decreases to 1.51 ± 0.16 eV when n-type poly-Si films are used. Meanwhile, the desorption activation energy of SiCl2 molecules for intrinsic poly-Si is equal to 1.86 ± 0.16 eV , and it decreases to 1.54 ± 0.21 eV when n-type poly-Si films are used. The etching-rate limiting process is determined using the calculated mean times of elementary processes." @default.
- W2783457300 created "2018-01-26" @default.
- W2783457300 creator A5067861169 @default.
- W2783457300 date "2018-04-01" @default.
- W2783457300 modified "2023-09-26" @default.
- W2783457300 title "Influence of phosphorus doping on the chemical etching rate of polycrystalline silicon films" @default.
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- W2783457300 doi "https://doi.org/10.1016/j.vacuum.2018.01.016" @default.
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