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- W2783729648 abstract "Abstract In the current study, TiO2-based thick film varistors (TFVs) doped with 2.5 mol% Ta and various concentrations of Ca were prepared by using screen-printing technique. The effects of the different Ca concentrations (0.5–3.0 mol%) on microstructure enhancement, nonlinear behavior, and dielectric properties of TiO2-based TFVs were investigated at 2.0 mol% doping concentration. Results showed a Vb value of 513 V, a resistivity value of 157.2 kΩ.cm and an α value of 62. Furthermore, high er value and low tan δ value at low-frequency range detected that the grain boundaries formed in 2.0 mol% doping concentration samples are good. Therefore, the doping amounts can be used to control the grain size and different properties of (Ca, Ta)-doped TiO2 TFVs with improved structural, electric, and dielectric properties." @default.
- W2783729648 created "2018-01-26" @default.
- W2783729648 creator A5058544402 @default.
- W2783729648 date "2018-03-01" @default.
- W2783729648 modified "2023-10-02" @default.
- W2783729648 title "Electric and dielectric behaviors of (Ca, Ta)-doped TiO2 thick film varistor obtained by screen printing" @default.
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- W2783729648 doi "https://doi.org/10.1016/j.rinp.2018.01.012" @default.
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