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• W2783753455 abstract "The understanding of failure behavior is one of the basic requirements for further development of nonvolatile resistive random access memory (RRAM) devices. In this paper, we show a detailed analysis of a temperature-dependent low-resistance state (LRS) retention failure behavior of RRAM based on TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> /Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> bilayer structure. The device is capable of showing good resistive switching properties with stable operating parameters. The LRS current conduction process is mostly dominated by the Fowler–Nordheim tunneling. Retention behavior has been studied with a wide range of temperatures from room temperature to 200 °C with different compliances. The experimental results of TiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> /Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> bilayer resistive switching memory are further supported theoretically by the Meyer–Neldel rule, which is fit well to the retention failure time." @default.
• W2783753455 created "2018-01-26" @default.
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• W2783753455 date "2018-03-01" @default.
• W2783753455 modified "2023-10-07" @default.
• W2783753455 title "Investigation of Retention Behavior of TiO_x/Al₂O₃ Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule" @default.
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• W2783753455 doi "https://doi.org/10.1109/ted.2017.2788460" @default.
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