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• W2783825661 abstract "This paper brings an experimental fabrication of highly ordered perpendicular In 2 O 3 Nanowires (In 2 O 3 NWs) on Si substrate. The Glancing Angle Deposition Technique (GLAD) has been employed to synthesis In 2 O 3 NWs on Si-substrate inside the e-beam evaporation chamber. The Transmission Electron Microscopy (TEM) is done to investigate the morphology of the device. The Electron Dispersive Spectroscopy (EDS) unveil the existence of Oxygen (O 2 ) ∼25.09% and Indium Oxide (In 2 O 3 ) ∼74.91%. The X-Ray Diffraction (XRD) analysis indicates the polycrystalline nature, which was supported by selective area electron diffraction (SAED) analysis. The dark current varies from ∼3.715 × 10−7 A/cm2 to ∼ 2.797 × 10−5 A/cm2 under light illumination at bias voltage of 2V. The Al/In 2 O 3 NW Schottky device shows a time response upon ON/OFF switching through white light." @default.
• W2783825661 created "2018-01-26" @default.
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• W2783825661 date "2017-04-01" @default.
• W2783825661 modified "2023-09-27" @default.
• W2783825661 title "Enlarged photodetection based on In<inf>2</inf>O<inf>3</inf> nanowires/Si heterojunction with Al Schottky contact" @default.
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• W2783825661 doi "https://doi.org/10.1109/ipact.2017.8245156" @default.
• W2783825661 hasPublicationYear "2017" @default.
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