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- W2784053769 abstract "Ion channeling and transmission electron microscopy were used to examine the microstructure of GaN implanted with deuterium (D) at high (>1 at. %) and low (< 0.1 at. %) D concentrations. At high concentrations, bubbles and basal-plane stacking faults were observed. Ion channeling showed the D was disordered relative to the GaN lattice, consistent with precipitation of D 2 into bubbles. At low D concentrations, bubbles and stacking faults are absent and ion channeling shows that a large fraction of the D occupies sites near the center of the c-axis channel." @default.
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- W2784053769 date "1999-01-01" @default.
- W2784053769 modified "2023-09-25" @default.
- W2784053769 title "Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium" @default.
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- W2784053769 doi "https://doi.org/10.1557/s1092578300002799" @default.
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