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- W2784681519 abstract "Monoclinic β-phase Ga2O3 has outstanding potential for power electronics, and high quality, large diameter bulk crystals and epitaxial layers of Ga2O3 are already available with a range of controllable n-type doping levels by edge-defined film-fed (EFG) growth using iridium crucibles, by Czochralski or by float zone. The direct energy bandgap of Ga2O3, ∼4.9 eV, yields a very high theoretical breakdown electric field (∼8 MV/cm). For power electronics, the Baliga figure-of-merit proportional carrier mobility, critical electric field and breakdown voltage, is almost four times higher for Ga2O3 than for GaN. Currently, the major limitation for Ga2O3 based device fabrication is the lack of low resistance Ohmic contacts, low damage dry etching process, and thermally stable Schottky contacts. In this work, we report a technique by employing Aluminum Zinc Oxide (AZO) to improve Ohmic contacts on Ga2O3, studies of etch rates and etching induced damages with Cl2/Ar and BCl3/Ar based discharge as well as Ni/Au and Pt/Au Schottky contacts." @default.
- W2784681519 created "2018-02-02" @default.
- W2784681519 date "2018-01-01" @default.
- W2784681519 modified "2023-09-25" @default.
- W2784681519 title "(Invited) Exploration of Process Techniques for Ga2O3 Based Electronics" @default.
- W2784681519 doi "https://doi.org/10.1149/ma2018-01/23/1419" @default.
- W2784681519 hasPublicationYear "2018" @default.
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