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- W2785160939 abstract "BiFeO3 thin films are deposited on FTO coated glass substrates using a simple sol-gel process, limiting thickness about 70 nm and Ag/BiFeO3/FTO RRAM devices are prepared. The devices showed low-voltage bipolar switching with the maximum Ion/Ioff ratio ∼450, and low set and reset voltages ∼1.1 V and −1.5 V, respectively. The devices are stable against on-off cycles with ∼104 s retention time without any significant degradation. The variations in the set and reset voltages are 0.4 V and 0.6 V, respectively. We found that ohmic and trap-controlled space charge limited conductions are responsible for low and high resistance states, respectively. The resistive switching mechanism is attributed to the formation and rupturing of the metal filament during the oxidation and reduction of Ag ions for the set and reset states. The devices showed strong robustness against environmental conditions even after ten months from their synthesis and first measurements, exhibiting good reproducibility, retention and endurance." @default.
- W2785160939 created "2018-02-02" @default.
- W2785160939 creator A5010319692 @default.
- W2785160939 creator A5062317946 @default.
- W2785160939 creator A5070687189 @default.
- W2785160939 creator A5071232244 @default.
- W2785160939 date "2018-08-01" @default.
- W2785160939 modified "2023-09-26" @default.
- W2785160939 title "Robust non-volatile bipolar resistive switching in sol-gel derived BiFeO3 thin films" @default.
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- W2785160939 doi "https://doi.org/10.1016/j.spmi.2018.05.008" @default.
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