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- W2785269520 abstract "The current industry plan is for EUV Lithography (EUVL) to enter High Volume Manufacturing (HVM) in the 2019/20timeframe for the 1X nm half-pitch (HP) node (logic and memory). Reticle quality and reticle defects continue to be a topindustry risk. The primary reticle defect quality requirement continues to be “no reticle defects causing 10% or larger CDerrors on wafer (CDE)”. In 2013, KLA-Tencor reported on inspection of EUV reticles using a 193nm wavelengthinspection system1. The report included both die-to-database (db) and die-to-die (dd) inspection modes. Results showedthe capability to detect a wide variety of programmed and native reticle defects judged to be critical. We have developedextensions to the 193nm wavelength (193) inspection system for the typical 2019/20 HVM EUV reticle defectrequirements. These improvements include innovations in: defect enhancement methods, database modeling, defectdetection, and throughput. In this paper, we report on the latest data and results of this work, focusing on EUV reticle dieto-database inspection. Inspection results are shown using typical next generation EUV programmed defect test reticlesand typical full field product-like EUV reticles, all from industry sources. Results show significant defect detectionimprovements versus the prior generation inspection system. We also report the test results of a high throughput die-todatabaseinspection mode that could be used for the typical mask shop outgoing inspection of EUV reticles where particlesare the primary defect to be detected and there is no pellicle (or the pellicle transmits 193nm wavelength2)." @default.
- W2785269520 created "2018-02-02" @default.
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- W2785269520 date "2018-01-22" @default.
- W2785269520 modified "2023-09-26" @default.
- W2785269520 title "1X HP EUV reticle inspection with a 193nm inspection system" @default.
- W2785269520 doi "https://doi.org/10.1117/12.2281354" @default.
- W2785269520 hasPublicationYear "2018" @default.
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