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- W2785742660 abstract "In this paper, we report multi-threshold-voltage (multi-Vt) options for stacked Nanosheet gate-all-around (GAA) transistors. V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</inf> can be modulated through workfunction metal (WFM) thickness as well as the inter-nanosheet spacing (T <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sus</inf> ), the combination of which may be leveraged to increase the number of undoped V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</inf> offerings within a CMOS device menu relative to a FinFET CMOS device menu, which fundamentally does not have T <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sus</inf> as a V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</inf> tuning option. Hence we propose our multi-V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</inf> scheme by taking advantage of the unique structure of stacked GAA transistor." @default.
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- W2785742660 date "2017-12-01" @default.
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- W2785742660 title "High-k metal gate fundamental learning and multi-V<inf>t</inf> options for stacked nanosheet gate-all-around transistor" @default.
- W2785742660 doi "https://doi.org/10.1109/iedm.2017.8268438" @default.
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