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- W2785929543 abstract "We review a few state of the art solutions and recent developments to model short channel III-V compound semiconductor n-MOSFETs based on full quantum transport, semiclassical multi-valley / multi-subband transport and TCAD models. The pros and cons of each, and the insights they can deliver, are illustrated with examples from recent technology developments and literature. Areas where improvements and implementations at TCAD level are most necessary are highlighted as well." @default.
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- W2785929543 date "2017-12-01" @default.
- W2785929543 modified "2023-10-16" @default.
- W2785929543 title "Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD" @default.
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- W2785929543 doi "https://doi.org/10.1109/iedm.2017.8268384" @default.
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