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• W2786255503 abstract "The photoelectric effect in semiconductors is the main mechanism for most modern optoelectronic devices, in which the adequate bandgap plays the key role for acquiring high photoresponse. Among numerous material categories applied in this field, the complex oxides exhibit great possibilities because they present a wide distribution of band gaps for absorbing light with any wavelength. Their physical properties and lattice structures are always strongly coupled and sensitive to light illumination. Moreover, the confinement of dimensionality of the complex oxides in the heterostructures can provide more diversities in designing and modulating the band structures. On the basis of this perspective, we have chosen itinerary ferromagnetic SrRuO3 as the model material, and fabricated it in one-unit-cell thickness in order to open a small band gap for effective utilization of visible light. By inserting this SrRuO3 monolayer at the interface of the well-developed two-dimensional electron gas system (LaAlO3/SrTiO3..." @default.
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• W2786255503 date "2018-01-31" @default.
• W2786255503 modified "2023-10-17" @default.
• W2786255503 title "Giant Photoresponse in Quantized SrRuO₃ Monolayer at Oxide Interfaces" @default.
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• W2786255503 doi "https://doi.org/10.1021/acsphotonics.7b01339" @default.
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