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• W2786698202 abstract "Inclusion of the III-V semiconductors in Field Effect Transistor technology is frequent, now days. In this paper, a tri-gate FinFET using InGaAs is proposed. Current carrying capability of the FinFET is usually large, since tri-gate structure, hence an appropriate doping in the channel would improve the ON and OFF characteristics of the device. To get an excellent I ON /I off , doping concentration in the channel and source/drain region is varied according to material requirements. Channel length L g of the proposed device is 20 nm. With high-K dielectric H fO 2 as oxide, metal gate-oxide stack in the FinFET is designed and simulations are performed. Simulation of FinFET with gate-oxide thickness t ox = 1 nm and a channel width W c = 10nm, exhibits I on /I off = 10.801 × 103, subthreshold slope SS ≈ 62 mV/decade and drain-induced-barrier-lowering DIBL = 83.3 mV/V." @default.
• W2786698202 created "2018-02-23" @default.
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• W2786698202 date "2017-03-01" @default.
• W2786698202 modified "2023-09-23" @default.
• W2786698202 title "Improved tri-gate FinFET transistor with InGaAs" @default.
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• W2786698202 doi "https://doi.org/10.1109/iciiecs.2017.8276070" @default.
• W2786698202 hasPublicationYear "2017" @default.
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