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- W2786709750 abstract "We report experimental results for the detection of deep-level defects in GaN after Mg ion implantation before high-temperature annealing. The n-type GaN samples were grown on GaN free-standing substrates by metalorganic vapor phase epitaxy. Mg ions were implanted at 50 keV with a small dosage of 1.5×1011 cm-2, which did not change the conduction type of the n-GaN. By depositing Al2O3 and a Ni/Au electrode onto the implanted n-GaN, metal-oxide-semiconductor (MOS) diodes were fabricated and tested. The measured capacitance–voltage (C–V) characteristics showed a particular behavior with a plateau region and a region with an anomalously steep slope. Fitting to the experimental C–V curves by simulation showed the existence of deep-level defects and a reduction of the carrier concentration near the GaN surface. By annealing at 800oC, the density of the deep-level defects was reduced and the carrier concentration partially recovered." @default.
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- W2786709750 date "2018-02-01" @default.
- W2786709750 modified "2023-09-27" @default.
- W2786709750 title "Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing" @default.
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- W2786709750 doi "https://doi.org/10.1063/1.5017891" @default.
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