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• W2788118981 abstract "An active solution to overcome the uncertainty and fluctuation in nano technology SRAM is introduced. It automatically adapts SRAM's operation optimized for the process variation and operating environments by using on-chip timer, temperature sensor, substrate noise manager and leakage current monitor. A test SRAM chip fabricated with an 80nm SRAM process, shows that average power consumption is reduced by 9%, and the standard deviation decreases by 58%." @default.
• W2788118981 created "2018-03-06" @default.
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• W2788118981 date "2005-07-27" @default.
• W2788118981 modified "2023-09-24" @default.
• W2788118981 title "An autonomous SRAM with on-chip sensors in an 80nm double stacked cell technology" @default.
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• W2788118981 doi "https://doi.org/10.1109/vlsic.2005.1469374" @default.
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