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- W2788156909 abstract "Complementary metal–oxide–semiconductor (CMOS) technologies have fully proven their adequacy for implementing data acquisition architectures based on functional blocks such as charge preamplifiers, sample and hold amplifiers, analog-to-digital converters, in analog signal processing for particle physics, nuclear physics, and x- or beta-ray detection. In CMOS technology two major noise sources exist: thermal noise and flicker noise. In contrast to channel thermal noise, which is well understood, the flicker noise mechanism is more complex, although its presence is surprisingly universal in all types of semiconductor devices. The Charge-Sensitive Amplifier (CSA) is commonly implemented using a folded cascode structure, built of transistors M1, M2, and M4. This architecture provides a high direct current gain and a relatively large operating bandwidth. It is obvious that CSA input noise is in practice defined by the detector capacitance, the peaking time specification, and the selection of the input MOS type and dimensions." @default.
- W2788156909 created "2018-03-06" @default.
- W2788156909 creator A5087507244 @default.
- W2788156909 date "2017-12-19" @default.
- W2788156909 modified "2023-09-24" @default.
- W2788156909 title "Analog Electronics for HVCMOS Sensors" @default.
- W2788156909 cites W2012645928 @default.
- W2788156909 doi "https://doi.org/10.1201/b20096-2" @default.
- W2788156909 hasPublicationYear "2017" @default.
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