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• W2788391304 endingPage "155203" @default.
• W2788391304 startingPage "155203" @default.
• W2788391304 abstract "The programming characteristics of charge trap flash memory device adopting amorphous In2Ga2ZnO7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO2 (blocking oxide)/p++-Si (control gate) substrate, where 3 nm thick atomic layer deposited Al2O3 (tunneling oxide) and 5 nm thick low-pressure CVD Si3N4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO." @default.
• W2788391304 created "2018-03-06" @default.
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• W2788391304 date "2018-02-23" @default.
• W2788391304 modified "2023-10-17" @default.
• W2788391304 title "In₂Ga₂ZnO₇oxide semiconductor based charge trap device for NAND flash memory" @default.
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• W2788391304 doi "https://doi.org/10.1088/1361-6528/aaadf7" @default.
• W2788391304 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/29420311" @default.
• W2788391304 hasPublicationYear "2018" @default.
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