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- W2788444677 abstract "It is shown that cast targets of highly pure refractory metals like W, Mo, Ti, Ta, Co, etc. and their compounds can be produced by means of a set of vacuum-metallurgical techniques—by vacuum high-frequency levitation, EB floating zone melting, EB melting, and electric arc vacuum melting as well as chemical purifying by ion exchange and halides. The cast refractory metal targets are extremely pure and chemically homogeneous. For magnetron sputtering and laser ablation, the cast silicide targets are also produced. The study reveals the possibilities and conditions of depositing the silicides and titanium-tungsten barrier layers by both the laser evaporation and magnetron sputtering. The physical and structural parameters as well as a trace impurity composition of sputtered metals and deposited thin films are studied by grazing-beam incidence X-ray diffraction, Auger electron spectroscopy, Rutherford backscattering of helium ions, mass spectrometry with inductively coupled plasma, etc." @default.
- W2788444677 created "2018-03-06" @default.
- W2788444677 creator A5031313454 @default.
- W2788444677 date "2018-02-28" @default.
- W2788444677 modified "2023-10-18" @default.
- W2788444677 title "High-purity Refractory Metals for Thin Film Metallization of VLSI" @default.
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- W2788444677 doi "https://doi.org/10.5772/intechopen.69126" @default.
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