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• W2789493879 abstract "Through numerical simulations corroborated by an analytical subthreshold model considering drain coupling, this paper systematically investigates the short-channel effects in negative-capacitance FETs with 2D MoS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> channel (2D-NCFET). Our study indicates that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct short-channel behaviors such as improved average subthreshold swing and threshold-voltage roll-up with decreasing gate length. In addition, the fringe field through the high-k interlayer dielectric can significantly alter the subthreshold characteristics of the short-channel 2D-NCFET, and hence needs to be carefully taken into account. Our study may provide insights for device design using negative-capacitance FETs." @default.
• W2789493879 created "2018-03-29" @default.
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• W2789493879 date "2018-04-01" @default.
• W2789493879 modified "2023-10-16" @default.
• W2789493879 title "Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors" @default.
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• W2789493879 doi "https://doi.org/10.1109/ted.2018.2805716" @default.
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