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- W2789650475 abstract "Asymmetric island sidewall growth (AISG) is employed to reduce the threading defect density and to modify the surface/interface properties of semipolar GaN templates and InGaN/GaN quantum wells (QWs)." @default.
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- W2789650475 date "2018-01-01" @default.
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- W2789650475 title "Improved semipolar green InGaN/GaN quantum wells on asymmetrically grown (112̄2) GaN templates and their correlations" @default.
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- W2789650475 doi "https://doi.org/10.1039/c8ce00151k" @default.
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