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• W2789889943 abstract "Abstract Doping an indium sulfide buffer layer with sodium is a promising route to replace the “state‐of‐the‐art” CdS buffer layer in chalcopyrite‐based thin‐film solar cells, as it achieves efficiencies as high as 17.9% for large‐area devices (30 cm × 30 cm). We report on the chemical and electronic structure of the In x S y :Na/CuIn(S,Se) 2 (CISSe) interface for thin‐film solar cells by means of photoelectron, soft x‐ray emission, and inverse photoemission spectroscopy. For as‐deposited In x S y :Na buffer layers, we find a sulfur‐poor surface and, in comparison to undoped In x S y and the standard CdS buffer, derive a large electronic surface band gap of 2.60 ± 0.11 eV. The conduction band offset at the buffer/absorber interface is a spike of 0.32 ± 0.10 eV. After annealing at 200°C to simulate the thermal load of subsequent cell manufacturing processes, an additional diffusion of copper and selenium from the absorber towards the buffer layer surface is observed, leading to a distinct electronic surface band gap decrease of the In x S y :Na buffer layer (to 2.11 ± 0.11 eV). We speculate that the diffusion of absorber elements causes a band gap widening at the former absorber surface and that both effects lead to a reduction of the conduction band spike for the buried In x S y :Na/CISSe interface after annealing." @default.
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• W2789889943 date "2018-02-09" @default.
• W2789889943 modified "2023-10-09" @default.
• W2789889943 title "Improving performance by Na doping of a buffer layer-chemical and electronic structure of the In_xS_y:Na/CuIn(S,Se)₂thin-film solar cell interface" @default.
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• W2789889943 doi "https://doi.org/10.1002/pip.2993" @default.
• W2789889943 hasPublicationYear "2018" @default.
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