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- W2790469422 abstract "Aluminum nitride(AlN) ceramic films have been widely used in many applications due to their excellent properties, especially in surface acoustic wave(SAW) devices, high-power light-emitting diode(LED) applications and deep ultraviolet light-emitting diodes(UV-LED). New applications put forward higher requirements for AlN thin films, such as lower surface roughness, high heat dissipation and specific crystal orientation. C-axis oriented films have been prepared by many methods but a-axis oriented films are almost absent. In this study, the fabrication method of single-phase a-axis AlN films was proposed. The films were prepared at room temperature by radio-frequency(RF) magnetron sputtering technique. The effect of sputtering power on crystal orientation, cross-sectional morphology, surface roughness and molecular structure was investigated. The analysis showed that the films fabricated at different sputtering powers highly textured along a-axis. AlN thin films reached the best crystal quality and the minimum surface roughness at the sputtering power of 110 W." @default.
- W2790469422 created "2018-03-29" @default.
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- W2790469422 date "2018-05-01" @default.
- W2790469422 modified "2023-10-14" @default.
- W2790469422 title "Fabrication and characterization of single-phase a-axis AlN ceramic films" @default.
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- W2790469422 doi "https://doi.org/10.1016/j.ceramint.2018.02.007" @default.
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