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• W2790941928 endingPage "040302" @default.
• W2790941928 startingPage "040302" @default.
• W2790941928 abstract "The origin of the leakage current of a trench-type vertical GaN diode was discussed. We found that the edge of p-GaN is the main leakage spot. To reduce the reverse leakage current at the edge of p-GaN, a dual-anode process was proposed. As a result, the reverse blocking voltage defined at the leakage current density of 1 mA/cm2 of a vertical GaN junction barrier Schottky (JBS) diode was improved from 780 to 1,190 V, which is the highest value ever reported for vertical GaN Schottky barrier diodes (SBDs)." @default.
• W2790941928 created "2018-03-29" @default.
• W2790941928 creator A5025231844 @default.
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• W2790941928 date "2018-02-21" @default.
• W2790941928 modified "2023-09-26" @default.
• W2790941928 title "Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process" @default.
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• W2790941928 doi "https://doi.org/10.7567/jjap.57.040302" @default.
• W2790941928 hasPublicationYear "2018" @default.
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