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• W2791043368 abstract "Black phosphorus (BP) has drawn great attention owing to its tunable band gap depending on thickness, high mobility, and large Ion/Ioff ratio, which makes BP attractive for using in future two-dimensional electronic and optoelectronic devices. However, its instability under ambient conditions poses challenge to the research and limits its practical applications. In this work, we present a feasible approach to suppress the degradation of BP by sulfur (S) doping. The fabricated S-doped BP few-layer field-effect transistors (FETs) show more stable transistor performance under ambient conditions. After exposing to air for 21 days, the charge-carrier mobility of a representative S-doped BP FETs device decreases from 607 to 470 cm2 V–1 s–1 (remained as high as 77.4%) under ambient conditions and a large Ion/Ioff ratio of ∼103 is still retained. The atomic force microscopy analysis, including surface morphology, thickness, and roughness, also indicates the lower degradation rate of S-doped BP compared to BP. First-principles calculations show that the dopant S atom energetically prefers to chemisorb on the BP surface in a dangling form and the enhanced stability of S-doped BP can be ascribed to the downshift of the conduction band minimum of BP below the redox potential of O2/O2–. Our work suggests that S doping is an effective way to enhance the stability of black phosphorus." @default.
• W2791043368 created "2018-03-29" @default.
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• W2791043368 date "2018-02-26" @default.
• W2791043368 modified "2023-10-14" @default.
• W2791043368 title "Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability" @default.
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• W2791043368 doi "https://doi.org/10.1021/acsami.7b19169" @default.
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• W2791043368 hasPublicationYear "2018" @default.
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