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- W2791649061 abstract "The recessed trapezoidal groove dual‐gate profile is achieved by the low power CF 4 plasma etching based on the principle of ion‐scattering. The recessed trapezoidal groove dual‐gate architecture can increase the lateral broadening of depletion width, yielding the Enhancement‐mode operation. This device demonstrates a threshold voltage of 0.43 V, a maximum drain current of 480 mA mm −1 and a trans‐conductance of 308 mS mm −1 . The device exhibits a low off‐state leakage current of ≈10 −10 A mm −1 and gate induced drain leakage is effectively improved. An extrinsic current gain cut off frequency of 32 GHz and a maximum oscillation frequency of 65 GHz are deduced. The threshold voltage ( V th ) stability of the Schottky gate HEMT is investigated. The recessed trapezoidal groove dual‐gate exhibits a small shift of V th , which is attributed to the lateral extension of depletion region in the trapezoidal groove dual‐gate structure." @default.
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- W2791649061 date "2018-01-23" @default.
- W2791649061 modified "2023-10-15" @default.
- W2791649061 title "The Recessed Trapezoidal Groove Dual-Gate AlGaN/GaN E-Mode Transistor by Using Depletion Enhancement Effect" @default.
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- W2791649061 doi "https://doi.org/10.1002/pssa.201700550" @default.
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