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• W2791695972 abstract "Solution processed high-κ zirconium oxide (ZrOx) insulator thin film was fabricated using broadband UV annealing at process temperatures <120 °C. ZrOx thin film was prepared by spin-coating an organometallic precursor solution followed by a gentle UV post-annealing process. The resulting insulator layer had a thickness of 18 nm and possessed a dielectric constant (κ) up to 22.6, which was clearly higher than those values reported previous studies. The corresponding leakage current remained at ∼10−9A/cm2 under an applied field of up to 4 MV/cm. An organic thin film transistor based on a ZrOx gate dielectric layer exhibited a field-effect mobility of 0.4 cm2/V/s, current ON/OFF ratio >106 and negligible device hysteresis. Results demonstrated that solution-processed UV-anneaed ZrOx thin film is a potential candidate of a high-κ gate insulator for TFT technology." @default.
• W2791695972 created "2018-03-29" @default.
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• W2791695972 date "2018-06-01" @default.
• W2791695972 modified "2023-09-30" @default.
• W2791695972 title "Low temperature solution processed high-κ zirconium oxide gate insulator by Broadband-UV annealing" @default.
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• W2791695972 doi "https://doi.org/10.1016/j.orgel.2018.03.002" @default.
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