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• W2791879352 abstract "Abstract The achievement of an efficient all‐Si electrically‐pumped light emitter is a major milestone in present optoelectronics still to be fulfilled. Silicon nanocrystals (Si NCs) are an attractive material which, by means of the quantum confinement effect, allow attaining engineered bandgap visible emission from Si by controlling the NC size. In this work, SiO 2 ‐embedded Si NCs are employed as an active layer within a light‐emitting device structure. It is demonstrated that the use of an additional thin Si 3 N 4 interlayer within the metal–insulator–semiconductor device design induces an enhanced minority carrier injection from the substrate, which in turn increases the efficiency of sequential carrier injection under pulsed electrical excitation. This results in a substantial increase in the electroluminescence efficiency of the device. Here, the effect of this Si 3 N 4 interlayer on the structural, optical, electrical, and electro‐optical properties of a Si NC‐based light emitter is reported, and the physics underlying these results is discussed." @default.
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• W2791879352 date "2018-03-22" @default.
• W2791879352 modified "2023-10-14" @default.
• W2791879352 title "Effect of Si₃ N₄ -Mediated Inversion Layer on the Electroluminescence Properties of Silicon Nanocrystal Superlattices" @default.
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• W2791879352 doi "https://doi.org/10.1002/aelm.201700666" @default.
• W2791879352 hasPublicationYear "2018" @default.
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