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- W2792694449 abstract "We visualize the grain structures for individual nanosized thin film transistors (TFTs), which are electrically characterized, with an improved data processing technique for the dark-field image reconstruction of nanobeam electron diffraction maps. Our individual crystal analysis gives the one-to-one correspondence of TFTs with different grain boundary structures, such as random and coherent boundaries, to the characteristic degradations of ON-current and threshold voltage. Furthermore, the local crystalline uniformity inside a single grain is detected as the difference in diffraction intensity distribution." @default.
- W2792694449 created "2018-03-29" @default.
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- W2792694449 date "2018-03-20" @default.
- W2792694449 modified "2023-10-17" @default.
- W2792694449 title "Individual analysis of inter and intragrain defects in electrically characterized polycrystalline silicon nanowire TFTs by multicomponent dark-field imaging based on nanobeam electron diffraction two-dimensional mapping" @default.
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- W2792694449 doi "https://doi.org/10.7567/jjap.57.04fd20" @default.
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