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• W2793196095 endingPage "04FR11" @default.
• W2793196095 startingPage "04FR11" @default.
• W2793196095 abstract "We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal–semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm−2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications." @default.
• W2793196095 created "2018-03-29" @default.
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• W2793196095 date "2018-03-06" @default.
• W2793196095 modified "2023-10-16" @default.
• W2793196095 title "AlN metal–semiconductor field-effect transistors using Si-ion implantation" @default.
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• W2793196095 doi "https://doi.org/10.7567/jjap.57.04fr11" @default.
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