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- W2793203664 abstract "High-frequency (f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>SW</sub> ), wide-input (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>IN</sub> ) power converters have gained increasing popularity in automotive applications due to the heightening demand for low profile, high power density and fast dynamic response [1]. To implement such converters, it is widely believed that Gallium Nitride (GaN) technology would replace conventional silicon technology in the future due to far-superior figures of merit (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>DSON</sub> ×Q <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ) [2,3]. Hence, there are urgent needs in developing compatible GaN driving techniques and circuits that enable high efficiency, high conversion ratio (CR) and high reliability power conversion at high f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>SW</sub> . Among many challenges in accomplishing these goals, gate driver dead-time (t <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dead</sub> ) control and ground-interference isolation require the most immediate attention." @default.
- W2793203664 created "2018-03-29" @default.
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- W2793203664 date "2018-02-01" @default.
- W2793203664 modified "2023-09-30" @default.
- W2793203664 title "A 3-to-40V V<inf>IN</inf> 10-to-50MHz 12W isolated GaN driver with self-excited t<inf>dead</inf> minimizer achieving 0.2ns/0.3ns t<inf>dead</inf>, 7.9% minimum duty ratio and 50V/ns CMTI" @default.
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- W2793203664 doi "https://doi.org/10.1109/isscc.2018.8310346" @default.
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