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- W2793263411 abstract "In this work, the deposition of SiO x films from O 2 /hexamethyldisiloxan (HMDSO) or Ar/HMDSO mixtures in an inductively coupled plasma is investigated. Substrate temperature and electron density are measured during the deposition process. Furthermore, the deposited layers are analyzed with a profilometer (thickness), infrared absorption spectroscopy (FTIR), and X‐ray photoelectron spectroscopy (XPS). Processes with continuous and pulsed HMDSO flows are compared to characterize the effect of surface treatment of a grown layer. Pure O 2 or Ar plasmas between the HMDSO gas flow pulses can offer a “post‐oxidation” or “post‐treatment” of the grown films. The discharge dynamics during the different phases are also investigated by time‐resolved electron density measurements. This approach has led to formation of carbon and Si‐OH group free SiO x films even without addition of O 2 gas under atmospheric pressure conditions." @default.
- W2793263411 created "2018-03-29" @default.
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- W2793263411 date "2018-01-23" @default.
- W2793263411 modified "2023-09-26" @default.
- W2793263411 title "Deposition of SiO<sub>x</sub> coatings by inductively coupled plasma: Effect of pulsed hexamethyldisiloxan flow" @default.
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- W2793263411 doi "https://doi.org/10.1002/ppap.201700186" @default.
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