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- W2793803368 abstract "The fabrication of low-dark-current heterojunction photodiodes based on p-type highly (100)-oriented crystalline selenium (c-Se)/n-type gallium oxide (Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> ) was demonstrated by enhancing the crystallinity of the tellurium (T <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>e</sub> ) nucleation layer. The preferential (100) crystal orientation of c-Se is significantly improved by using high-quality T <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>e</sub> nucleation layers that are thermally evaporated at a relatively high Te-source temperature (T <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Te</sub> ) without substrate heating. The fabricated device exhibits an extremely low-dark current under 100 pA/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> (at room temperature) and a high external quantum efficiency of over 85% at a wavelength of 550 nm at a reverse bias of 15 V. These results demonstrate the potential of c-Se-based photodiodes to provide highly sensitive imaging devices." @default.
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- W2793803368 date "2018-04-15" @default.
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- W2793803368 title "Low-Dark-Current Photodiodes Comprising Highly (100)-Oriented Hexagonal Selenium With Crystallinity-Enhanced Tellurium Nucleation Layers" @default.
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- W2793803368 doi "https://doi.org/10.1109/jsen.2018.2809477" @default.
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