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- W2793824706 abstract "We investigate the influence of argon plasma assistance on the depletion of SiH4 in the preparation of μc-Si:H films via plasma-enhanced chemical vapor deposition (PECVD). From optical emission spectrometry (OES) data of the μc-Si:H deposition, we infer that the excited Ar+ and metastable Ar* states enhance the dissociation of SiH4 and H2 molecules to generate ultra-depletion of SiH4. The ultra-depletion of SiH4 increases the μc-Si:H thin-film deposition rate from 4.5 Å/s to 23.4 Å/s at 6-sccm flow of SiH4. This ultra-depletion condition facilitates the gradual substitution of H2 by Ar, which leads to reduced crystallinity at low argon fractions (far), preferential crystallographic orientation along the (111) direction, and fluctuation of the hydrogen content and microstructure factor (R). Thus, the properties of the μc-Si:H thin films can be controlled via control of the atomic hydrogen generation and physical sputtering effects. The highest photosensitivity (2.2 × 103) is observed at far = 56%. Furthermore, we fabricate an a-Si:H/μc-Si:H tandem solar cell with a total thickness of 1450 nm. The cell exhibits an initial efficiency of 11.44%, and the efficiency reduces to 10.24% after 1000 h of light soaking. The cell also exhibits a significantly higher Voc × FF stability over that of Jsc." @default.
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- W2793824706 date "2018-06-01" @default.
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- W2793824706 title "SiH4 enhanced dissociation via argon plasma assistance for hydrogenated microcrystalline silicon thin-film deposition and application in tandem solar cells" @default.
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- W2793824706 doi "https://doi.org/10.1016/j.solmat.2018.02.024" @default.
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