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- W2793847757 abstract "To clarify the process of formation of source regions of high-performance Ge n-channel tunneling field-effect transistors (TFETs), p+–n junctions formed by low-energy ion implantation (I/I) of BF2 atoms are characterized. Here, the formation of p+–n junctions with steep B profiles and low junction leakage is a key issue. The steepness of 5.7 nm/dec in profiles of B implanted into Ge is obtained for BF2 I/I at 3 keV with a dose of 4 × 1014 cm−2. Ge-on-insulator (GOI) n-TFETs with the source tunnel junctions formed by low-energy B and BF2 I/I are fabricated on GOI substrates and the device operation is confirmed. Although the performance at room temperature is significantly degraded by the source junction leakage current, an I on/I off ratio of 105 and the minimum sub-threshold swing (S.S.) of 130 mV/dec are obtained at 10 K. It is found that GOI n-TFETs with steeper B profiles formed by BF2 I/I have led to higher on current and a lower sub-threshold slope, demonstrating the effectiveness of steep B profiles in enhancing the GOI TFET performance." @default.
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- W2793847757 date "2018-03-12" @default.
- W2793847757 modified "2023-09-26" @default.
- W2793847757 title "Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation" @default.
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- W2793847757 doi "https://doi.org/10.7567/jjap.57.04fd15" @default.
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