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• W2794397652 abstract "Application of an external rf substrate bias during the H₂ plasma half cycle leads to a significant decrease in film resistivity resulting from a major reduction of O content and an increase in the Hf³⁺ oxidation state fraction in HfN_x thin films" @default.
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• W2794397652 date "2018-01-01" @default.
• W2794397652 modified "2023-09-23" @default.
• W2794397652 title "Low resistivity HfN_x grown by plasma-assisted ALD with external rf substrate biasing" @default.
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• W2794397652 doi "https://doi.org/10.1039/c7tc05961b" @default.
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