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- W2794546369 abstract "We propose a simple hydroxyl group transfer method to improve the electrical characteristics of solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs). Tuned poly(dimethylsiloxane) elastomer, which has a hydroxyl group as a terminal chemical group, was adhered temporarily to an IGZO thin-film during the solidification step to transfer and supply sufficient hydroxyl groups to the IGZO thin-film. The transferred hydroxyl groups led to efficient hydrolysis and condensation reactions, resulting in a denser metal–oxygen–metal network being achieved in the IGZO thin-film compared to the conventional IGZO thin-film. In addition, it was confirmed that there was no morphological deformation, including to the film thickness and surface roughness. The hydroxyl group transferred IGZO based TFTs exhibited enhanced electrical properties (field-effect mobility of 2.21 cm2 V−1 s−1, and on/off current ratio of 106) compared to conventional IGZO TFTs (field-effect mobility of 0.73 cm2 V−1 s−1 and on/off current ratio of 105)." @default.
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- W2794546369 date "2018-03-28" @default.
- W2794546369 modified "2023-09-24" @default.
- W2794546369 title "Enhanced electrical properties in solution-processed InGaZnO thin-film transistors by viable hydroxyl group transfer process" @default.
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- W2794546369 doi "https://doi.org/10.7567/jjap.57.05gc02" @default.
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