Matches in SemOpenAlex for { <https://semopenalex.org/work/W2794647531> ?p ?o ?g. }
- W2794647531 endingPage "301" @default.
- W2794647531 startingPage "253" @default.
- W2794647531 abstract "Chemical mechanical planarization has been widely applied to selectively remove materials for topography planarization and device structure formation in semiconductor manufacturing. The selective material removal is achieved by using chemical reaction and mechanical abrasion with slurries containing unique chemical formulations and large numbers of abrasive particles. During polishing, chemical reaction products and mechanical wear debris are generated. Slurry particles and polishing byproducts are pressed onto wafer surface. During wafer transferring from polisher to cleaner, contaminants are adhered onto wafer surface. Post-CMP cleaning is required to remove particles, organic residues, and metallic contaminants from wafers with different surface, chemical, and mechanical properties in various geometric features, without generating scratches, water marks, surface roughness, corrosion, and dielectric constant shift. In this chapter, a review of post-CMP cleaning for various CMP applications is provided with a focus on cleaning technology, cleaning chemistry, and cleaning process. Common defect modes and generation mechanism are discussed. Post-CMP cleaning plays a critical role in meeting stringent CMP defect and device reliability/yield requirement." @default.
- W2794647531 created "2018-04-06" @default.
- W2794647531 creator A5035120958 @default.
- W2794647531 creator A5046040778 @default.
- W2794647531 creator A5058017510 @default.
- W2794647531 creator A5075359772 @default.
- W2794647531 date "2018-01-01" @default.
- W2794647531 modified "2023-09-25" @default.
- W2794647531 title "Post-CMP Cleaning" @default.
- W2794647531 cites W1978747952 @default.
- W2794647531 cites W1986749826 @default.
- W2794647531 cites W1990906299 @default.
- W2794647531 cites W1995868638 @default.
- W2794647531 cites W1997083459 @default.
- W2794647531 cites W2012733634 @default.
- W2794647531 cites W2013479077 @default.
- W2794647531 cites W2016152731 @default.
- W2794647531 cites W2017633522 @default.
- W2794647531 cites W2020162412 @default.
- W2794647531 cites W2030462598 @default.
- W2794647531 cites W2033956182 @default.
- W2794647531 cites W2037512147 @default.
- W2794647531 cites W2038610827 @default.
- W2794647531 cites W2044932930 @default.
- W2794647531 cites W2047101537 @default.
- W2794647531 cites W2049109292 @default.
- W2794647531 cites W2058472371 @default.
- W2794647531 cites W2061338918 @default.
- W2794647531 cites W2061758653 @default.
- W2794647531 cites W2065553086 @default.
- W2794647531 cites W2067137452 @default.
- W2794647531 cites W2068563718 @default.
- W2794647531 cites W2071267419 @default.
- W2794647531 cites W2074938723 @default.
- W2794647531 cites W2075220641 @default.
- W2794647531 cites W2076160524 @default.
- W2794647531 cites W2077949670 @default.
- W2794647531 cites W2098271643 @default.
- W2794647531 cites W2098557454 @default.
- W2794647531 cites W2110271849 @default.
- W2794647531 cites W2111807412 @default.
- W2794647531 cites W2112331257 @default.
- W2794647531 cites W2113722029 @default.
- W2794647531 cites W2121014922 @default.
- W2794647531 cites W2125288294 @default.
- W2794647531 cites W2126671008 @default.
- W2794647531 cites W2140593427 @default.
- W2794647531 cites W2142084274 @default.
- W2794647531 cites W2144113806 @default.
- W2794647531 cites W2149429958 @default.
- W2794647531 cites W2150652376 @default.
- W2794647531 cites W2157566550 @default.
- W2794647531 cites W2161612187 @default.
- W2794647531 cites W2166022873 @default.
- W2794647531 cites W2167080998 @default.
- W2794647531 cites W2169949921 @default.
- W2794647531 cites W2315240202 @default.
- W2794647531 cites W2327271576 @default.
- W2794647531 cites W2332651003 @default.
- W2794647531 cites W2335698598 @default.
- W2794647531 cites W2508536275 @default.
- W2794647531 cites W2514890297 @default.
- W2794647531 cites W2564128472 @default.
- W2794647531 cites W2595423431 @default.
- W2794647531 cites W2086901145 @default.
- W2794647531 doi "https://doi.org/10.1016/b978-0-323-51084-4.00005-8" @default.
- W2794647531 hasPublicationYear "2018" @default.
- W2794647531 type Work @default.
- W2794647531 sameAs 2794647531 @default.
- W2794647531 citedByCount "4" @default.
- W2794647531 countsByYear W27946475312021 @default.
- W2794647531 countsByYear W27946475312022 @default.
- W2794647531 countsByYear W27946475312023 @default.
- W2794647531 crossrefType "book-chapter" @default.
- W2794647531 hasAuthorship W2794647531A5035120958 @default.
- W2794647531 hasAuthorship W2794647531A5046040778 @default.
- W2794647531 hasAuthorship W2794647531A5058017510 @default.
- W2794647531 hasAuthorship W2794647531A5075359772 @default.
- W2794647531 hasConcept C107365816 @default.
- W2794647531 hasConcept C118231568 @default.
- W2794647531 hasConcept C138113353 @default.
- W2794647531 hasConcept C159985019 @default.
- W2794647531 hasConcept C160671074 @default.
- W2794647531 hasConcept C171250308 @default.
- W2794647531 hasConcept C178790620 @default.
- W2794647531 hasConcept C180088628 @default.
- W2794647531 hasConcept C185592680 @default.
- W2794647531 hasConcept C191897082 @default.
- W2794647531 hasConcept C192562407 @default.
- W2794647531 hasConcept C2780710336 @default.
- W2794647531 hasConcept C2780957350 @default.
- W2794647531 hasConcept C71039073 @default.
- W2794647531 hasConcept C94293008 @default.
- W2794647531 hasConceptScore W2794647531C107365816 @default.
- W2794647531 hasConceptScore W2794647531C118231568 @default.
- W2794647531 hasConceptScore W2794647531C138113353 @default.
- W2794647531 hasConceptScore W2794647531C159985019 @default.
- W2794647531 hasConceptScore W2794647531C160671074 @default.