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• W2794734151 abstract "Abstract This manuscript focused on image processing due to optoelectronic integration instruments between quantum well infrared phototransistor and light emitting diode (QWIPT-LED). Thus, characteristics analysis of pixelless images deformation due to QWIPT-LED optoelectronic integration instruments are the aim of this manuscript. Pixelless images reabsorption and reemission challenges during radiative conversion from far infrared (FIR) to near infrared (NIR) are addressed. Overcoming the photons recycling process that deteriorate the output image is the main objective. Therefore, curves for the image characteristics are presented with special emphasis on the carrier’s concentration within the QWIPT-LED optoelectronic devices. These characteristics include contrast transfer function and image resolution. Besides providing a complete analysis of image characteristics, this paper extends the analysis to the image conversion efficiency that figure-of-merit characteristic of QWIP-LED. Additionally, the performance of the underlined characteristics is conducted through closed form expressions. The spatial distribution of the electrons concentration that injected from quantum well infrared phototransistor (QWIPT) into light emitting diode (LED) active layer is considered. Also, the effects of image uniformity and nonuniformity on the image contrast and image resolution are presented. Also, the investigation and description of carrier’s movement within optoelectronic QWIPT-LED is perceived. Moreover, optimization of this optoelectronic integrated device is of concern. The obtained result confirms that contrast transfer function of the image depends on the lithography process during integration between QWIPT and LED as well as structural parameters. These parameters represent the LED thickness of the device portion, radiative recombination, non-radiative recombination, number of quantum well (QW) and period length of the QW. As a final conclusion, the reabsorption process can be minimized by optimal design of the structure parameters with number of QW of 14, thicknesses of QWIPT 120 μm and life time ratio of 0.999. These obtained results confirm the potential applicability of the proposed work of QWIPT-LED pixelless image instrument for image conversion under various parameters conditions. Hence, better performance of QWIPT-LED pixelless image instrument can be achieved." @default.
• W2794734151 created "2018-04-06" @default.
• W2794734151 creator A5066368452 @default.
• W2794734151 date "2018-09-01" @default.
• W2794734151 modified "2023-10-16" @default.
• W2794734151 title "Pixelless image deformation characteristics due to optoelectronic integration between quantum well infrared phototransistor and light emitting diode" @default.
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• W2794734151 doi "https://doi.org/10.1016/j.optlastec.2018.03.008" @default.
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