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- W2794865540 abstract "Undoped and Be-doped InAs1–xSbx (0 ≤ x ≤ 0.71) epitaxial layers were successfully grown on lattice mismatched semi-insulating GaAs (001) substrate with 2° offcut towards <110>. The effect of the InAs buffer layer on the quality of the grown layers was investigated. Moreover, the influence of Sb/In flux ratio on the Sb fraction was examined. Furthermore, we have studied the defects distribution along the depth of the InAsSb epilayers. In addition, the p-type doping of the grown layers was explored. The InAsSb layers were assessed by X-ray diffraction, Nomarski microscopy, high resolution optical microscopy and Hall effect measurement. The InAs buffer layer was found to be beneficial for the growth of high quality InAsSb layers. The X-ray analysis revealed a full width at half maximum (FWHM) of 571 arcsec for InAs 0.87Sb0.13. It is worth noting here that the Hall concentration (mobility) as low (high) as 5 × 1016 cm−3 (25000 cm2V−1s−1) at room temperature, has been acquired." @default.
- W2794865540 created "2018-04-06" @default.
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- W2794865540 date "2018-03-01" @default.
- W2794865540 modified "2023-10-14" @default.
- W2794865540 title "Investigation on the InAs<sub>1–x</sub>Sb<sub>x</sub>epilayers growth on GaAs (001) substrate by molecular beam epitaxy" @default.
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- W2794865540 doi "https://doi.org/10.1088/1674-4926/39/3/033003" @default.
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