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• W2794892019 abstract "The authors report on a comprehensive study of the growth of coherently strained GaAs quantum dots (QDs) on (111) surfaces via the Stranski–Krastanov (SK) self-assembly mechanism. Recent reports indicate that the long-standing challenges, whereby the SK growth mechanism could not be used to synthesize QDs on (111) surfaces, or QDs under tensile strain, have been overcome. However, a systematic study of the SK growth of (111)-oriented, tensile-strained QDs (TSQDs) as a function of molecular beam epitaxy growth parameters is still needed. Here, the authors explore the effects of deposition amount, substrate temperature, growth rate, and V/III flux ratio on the SK-driven self-assembly of GaAs(111)A TSQDs. The authors highlight aspects of TSQD SK self-assembly on (111) surfaces that appear to differ from the SK growth of traditional compressively strained QDs on (100) surfaces. The unique properties of (111) QDs and tensile-strained QDs mean that they are of interest for various research areas. The results discussed here offer a practical guide for tailoring the size, shape, density, uniformity, and photon emission wavelength and intensity of (111) TSQDs for future applications." @default.
• W2794892019 created "2018-04-06" @default.
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• W2794892019 date "2018-03-30" @default.
• W2794892019 modified "2023-09-27" @default.
• W2794892019 title "Self-assembly of (111)-oriented tensile-strained quantum dots by molecular beam epitaxy" @default.
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• W2794892019 doi "https://doi.org/10.1116/1.5018002" @default.
• W2794892019 hasPublicationYear "2018" @default.
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