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- W2795222904 abstract "The statistical properties of the carrier density profile of graphene in the ground state in the presence particle-particle interaction and random charged impurity in zero gate voltage has been recently obtained by Najafi textit{et al.} (Phys. Rev E95, 032112 (2017)). The non-zero chemical potential ($mu$) in gated graphene has non-trivial effects on electron-hole puddles, since it generates mass in the Dirac action and destroys the scaling behaviors of the effective Thomas-Fermi-Dirac theory. We provide detailed analysis on the resulting spatially inhomogeneous system in the framework of the Thomas-Fermi-Dirac theory for the Gaussian (white noise) disorder potential. We show that, the chemical potential in this system as a random surface, destroys the self-similarity, and the charge field is non-Gaussian. We find that the two-body correlation functions are factorized to two terms: a pure function of the chemical potential and a pure function of the distance. The spatial dependence of these correlation functions is double-logarithmic, e.g. the two-point density correlation $D_2(r,mu)propto mu^2expleft[-left(-a_Dlnln r^{beta_D}right)^{alpha_D} right]$ ($alpha_D=1.82$, $beta_D=0.263$ and $a_D=0.955$). The Fourier power spectrum function behaves like $ln(S(q))=-beta_S^{-a_S}left(ln q right)^{a_S}+2ln mu$ ($a_S=3.0pm 0.1$ and $beta_S=2.08pm 0.03$) in contrast to the ordinary Gaussian rough surfaces for which $a_S=1$ and $beta_S=frac{1}{2}(1+alpha)^{-1}$, ($alpha$ being the roughness exponent). The geometrical properties are however similar to the un-gated ($mu=0$) case, with the exponents that are reported in the text." @default.
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- W2795222904 date "2018-07-11" @default.
- W2795222904 modified "2023-10-18" @default.
- W2795222904 title "Scaling properties of monolayer graphene away from the Dirac point" @default.
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- W2795222904 doi "https://doi.org/10.1103/physreve.98.012111" @default.
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