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• W2795702924 abstract "Heavily n-type doping of Germanium was the key parameter in recent breakthroughs of Si-compatible infrared emitting devices. We investigate an in-situ co-doping technique using Phosphorus (P) and Antimony (Sb) to fabricate smooth and heavily n-type doped Ge films epitaxially grown on Si(001) using molecular beam epitaxy. The role of the rapid thermal annealing process in the dopants activation and in the significant annihilation of the threading dislocations is presented. Hall effect measurements reveal a free electron concentration of 4.2 × 1019 cm−3 at room temperature. The accumulated strain in the Ge films is studied using X-ray diffraction (XRD) data for P, Sb and co-doping, before and after annealing. A correlation between XRD and Hall effect results revealed a synergistic mechanism associated with the presence of Sb that improves the substitutional incorporation of P atoms. Atom Probe Tomography was implemented to investigate the effect of annealing on the distribution and clustering of dopants. Clustering and inhomogeneity in the density of Sb atoms are observed before annealing, while the density of P atoms was found to be homogeneous. After annealing, the clustering of P becomes more prominent. We show that the clustering is a limiting factor for the activation efficiency of Phosphorus in heavily doped Germanium. The referenced publication has been retracted by the authors because of the use of unauthorized data represented by Figs. 8, 9, 10, 11, 12, 13, and 14. These figures were obtained with the help of other scientists in IM2NP Laboratory (Marseille, France) and have been only authorized for publication in the Ph.D. thesis of M. A. Zrir. The authors recognize that the publication of data that have been obtained with substantial help from other scientists can only be with their prior authorization. The authors sincerely apologize for this and recognize that the use of unauthorized data does not comply with the ethical standards of AIP Publishing and Journal of Applied Physics." @default.
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• W2795702924 date "2018-04-04" @default.
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• W2795702924 title "Investigation of <i>in-situ</i> co-doping by Sb and P of germanium films grown on Si(001) by molecular beam epitaxy" @default.
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• W2795702924 doi "https://doi.org/10.1063/1.5009327" @default.
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