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• W2796976105 abstract "In this work, we discuss three novel Ti (germano-)silicidation techniques featuring respectively the pre-contact amorphization implantation (PCAI), the TiSi co-deposition, and Ti atomic layer deposition (ALD). All three techniques form TiSix(Gey) contacts with ultralow contact resistivity (ρc) of (1-3)×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-9</sup> Ω·cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> on both highly doped n-Si and p-SiGe substrates: these techniques meet pc requirement of 5-14 nm CMOS technology and feature unified CMOS contact solutions. We further discuss the compatibility of these techniques to the realistic CMOS transistor fabrication." @default.
• W2796976105 created "2018-04-24" @default.
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• W2796976105 date "2018-03-01" @default.
• W2796976105 modified "2023-10-01" @default.
• W2796976105 title "Titanium (germano-)silicides featuring 10⁻⁹ Ω·cm² contact resistivity and improved compatibility to advanced CMOS technology" @default.
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• W2796976105 doi "https://doi.org/10.1109/iwjt.2018.8330298" @default.
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