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- W2797173825 abstract "The tungsten (W) film deposited by physical vapor deposition (PVD) is a option of hard mask on SiO 2 film for nano-patterning. To enhance deep etching of SiO 2 , hard masks are widely used for its high selectivity. We studied different parameters in SiO 2 reactive ion etch (RIE) process such as power, gas chemistries (CHF 3 /Ar/O 2 ) and pressure that influence the selectivity of SiO 2 /W. It is revealed that with the increase of RF power, the etching rate of SiO 2 and the selectivity increase continually. With the increase of work pressure, the selectivity decreases greatly. Ar and O 2 play important roles in the process. And a selectivity of SiO 2 film to W hard mask of 78:1 is realized in this work, which shows great potential of W as a hard mask in application." @default.
- W2797173825 created "2018-04-24" @default.
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- W2797173825 date "2018-03-01" @default.
- W2797173825 modified "2023-10-04" @default.
- W2797173825 title "Highly selective etch of silicon dioxide with tungsten hard mask deposited by PVD process" @default.
- W2797173825 doi "https://doi.org/10.1109/iwjt.2018.8330311" @default.
- W2797173825 hasPublicationYear "2018" @default.
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