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- W2797703436 abstract "Abstract In this work, the Si+ doping of undoped GaN (n ∼1 × 1016 cm−3) on sapphire by a single step implantation or sequential implantation/recrystallization processes, to a total fluence of 1 × 1016 at/cm2 and subsequent activation annealing at 1100 °C for 2 min, were demonstrated and analysed. We proved that the multicycle implantation/recrystallization process is better in terms of structural and electrical parameters of implanted region than conventional single step implantation. Rutherford backscattering spectrometry in channeling geometry (RBS/c), McChasy simulations and atomic force microscopy (AFM) studies showed, that the proposed process does not deteriorate surface morphoplogy and leads to a significantly lower defect concentrations. Low resistivity ohmic contacts, with RC" @default.
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- W2797703436 date "2019-07-01" @default.
- W2797703436 modified "2023-10-15" @default.
- W2797703436 title "Analysis of defect structure in GaN epilayers doped with implanted Si+ by RBS/c method" @default.
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- W2797703436 doi "https://doi.org/10.1016/j.nimb.2018.03.028" @default.
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