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• W2797905110 abstract "In this work we present an evaluation routine aimed towards assessing the multibit capability of Resistive Random Access Memory (RRAM) technologies. We illustrate a characterization methodology for the maximum possible exploitation of the resistive states of a RRAM cell. Our characterization routine consists of a three phase algorithm: during the first it infers the polarity needed to induce a change in the device's conductance; the second stabilizes the resistive states of the device into a baseline resistance and during the third a sequence of pulses of increasing amplitude is used to determine the actual resistive states. This technology-agnostic methodology allows for efficient and high resolution partitioning of the cell's resistive operating range allowing them to operate in a truly analogue fashion. Demonstrating the maximum potential of RRAM cells in terms of closely packed resistive states can open new avenues for research in non-volatile memories, reconfigurable electronics and neuromorphic applications." @default.
• W2797905110 created "2018-04-24" @default.
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• W2797905110 date "2018-01-01" @default.
• W2797905110 modified "2023-09-23" @default.
• W2797905110 title "Benchmarking Analogue Performance of Emerging Random Access Memory Technologies" @default.
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• W2797905110 doi "https://doi.org/10.1109/iscas.2018.8351793" @default.
• W2797905110 hasPublicationYear "2018" @default.
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