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• W2798159780 abstract "Photovoltaic (PV) energy conversion systems require fast-switching power devices that are highly efficient with low semiconductor loss under harsh environmental conditions. Silicon (Si) semiconductor devices are nearing their practical limits in meeting the ever-increasing requirements of power converters. However, wide bandgap (WBG) semiconductor devices made from silicon carbide (SiC) are exceeding these limits. SiC power devices enable more efficient and higher performance power converters. This paper presents a non-isolated dc-dc boost converter based on SiC power devices optimized for use in PV systems. The performance of two otherwise identical converters is compared, one with a new SiC MOSFET/SiC Schottky diode, and one with a conventional Si MOSFET/Si diode. A comparison of switching characteristics and energy loss of each semiconductor device is performed at different switch currents. Converter total loss and overall efficiency are evaluated at different switching frequencies, input voltages, and output power levels. The results indicate that the SiC MOSFET/SiC Schottky diode in the converter is more efficient, performs better, and has reduced power loss compared to the Si MOSFET/Si diode." @default.
• W2798159780 created "2018-04-24" @default.
• W2798159780 creator A5008476642 @default.
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• W2798159780 date "2017-11-01" @default.
• W2798159780 modified "2023-09-24" @default.
• W2798159780 title "Performance evaluation of a DC-DC boost converter with wide bandgap power devices" @default.
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• W2798159780 doi "https://doi.org/10.1109/sustech.2017.8333530" @default.
• W2798159780 hasPublicationYear "2017" @default.
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