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• W2799696700 startingPage "064101" @default.
• W2799696700 abstract "We demonstrate epitaxial β-Ga2O3/GaN-based vertical metal–heterojunction-metal (MHM) broadband UV-A/UV-C photodetectors with high responsivity (3.7 A/W) at 256 and 365 nm, UV-to-visible rejection >103, and a photo-to-dark current ratio of ∼100. A small (large) conduction (valence) band offset at the heterojunction of pulsed laser deposition (PLD)-grown β-Ga2O3 on metal organic chemical vapor deposition (MOCVD)-grown GaN-on-silicon with epitaxial registry, as confirmed by X-ray diffraction (XRD) azimuthal scanning, is exploited to realize detectors with an asymmetric photoresponse and is explained with one-dimensional (1D) band diagram simulations. The demonstrated novel vertical MHM detectors on silicon are fully scalable and promising for enabling focal plane arrays for broadband ultraviolet sensing." @default.
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• W2799696700 date "2018-04-27" @default.
• W2799696700 modified "2023-10-18" @default.
• W2799696700 title "Demonstration of high-responsivity epitaxial β-Ga₂O₃/GaN metal–heterojunction-metal broadband UV-A/UV-C detector" @default.
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• W2799696700 doi "https://doi.org/10.7567/apex.11.064101" @default.
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